| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial wafer which improves resistivity uniformity of the epitaxial wafer by reliably suppressing autodoping at the time of the formation of an epitaxial layer and efficiently forms a device even in a peripheral part, and to provide the epitaxial wafer. <P>SOLUTION: A silicon single crystal substrate 10 that a first epitaxial layer 11 is formed on one surface 10a is subject to a deposit removal process. In the deposit removal process, deposits P generated in a first growth process S1 are removed by performing mirror polishing, for example, on chamfered parts 10C of the silicon single crystal substrate 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
