SiC EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a step bunching-free SiC epitaxial wafer and manufacturing method therefor, capable of achieving no step bunching over the whole surface of a wafer.

SOLUTION: The present invention is a SiC epitaxial wafer formed with a SiC epitaxial layer on a 4H-SiC monocrystalline substrate inclined at an off angle of 0.4° to 5°. The SiC epitaxial wafer has no short step bunching.

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