发明名称 |
NON-CONFORMAL HARDMASK DEPOSITION FOR THROUGH SILICON ETCH |
摘要 |
The present invention provides a method to form deep features in a stacked semiconductor structure. Deposition of a non-conformal hardmask onto a patterned topography can form a hardmask to protect all but recessed areas with minimal integration steps. The invention enables etching deep features, even through multiple BEOL layers, without multiple additional process steps.
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申请公布号 |
US2012190204(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113014114 |
申请日期 |
2011.01.26 |
申请人 |
GRAVES-ABE TROY L.;FAROOQ MUKTA G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRAVES-ABE TROY L.;FAROOQ MUKTA G. |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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