| 摘要 |
<p>Provided is a bisectional GaN semiconductor laser element having a configuration and structure such that defects are rarely generated in a saturable absorption region facing a first light emission region. The element comprises a first light emission region (41A), a second light emission region (41B), a saturable absorption region (42) between these light emission regions, and a first electrode and a second electrode. Laser light is emitted from the end face on the second light emission region side. The element has a ridge stripe structure. The second electrode (62) is formed from a first part (62A), a second part (62B), and a third part (62C). When the average width of the portion having a ridge stripe structure in the first part (62A) is W1-ave and the average width of the portion having a ridge stripe structure in the second part (62B) is W2-ave, 12-ave/W1-ave is satisfied.</p> |
