发明名称 MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To prevent deterioration of a magnetic device due to damage introduced by a magnetic tunnel junction. <P>SOLUTION: The magnetic device comprises a lower electrode 28 provided with a recess 26 in the upper surface, a magnetic tunnel junction layer 30 formed on the inner surface of the recess in the lower electrode and on the lower electrode on the outside of the recess, and including a tunnel barrier layer and a magnetization fixed layer and a magnetization free layer sandwiching a tunnel barrier layer vertically, and an upper electrode 40 formed on the magnetic tunnel junction layer so as not to reach the side surface of the magnetic tunnel junction layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012142415(A) 申请公布日期 2012.07.26
申请号 JP20100293770 申请日期 2010.12.28
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 NAKABAYASHI MASAAKI
分类号 H01L43/08;H01L21/8246;H01L27/105;H01L29/82 主分类号 H01L43/08
代理机构 代理人
主权项
地址