发明名称 PROCESSING EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide processing equipment in which an in-plane temperature distribution at a wafer support is appropriately formed. <P>SOLUTION: The processing equipment includes: a processing chamber 10; a support 22 for a wafer W, provided in the processing chamber; a heater h for heating the support; and a shower plate 12 provided to face the support and having a plurality of gas blow-out holes 14 communicating with the processing chamber. A surface facing the support in the shower plate includes a plurality of regions where reflectances with respect to radiation heat from a side of the support are relatively different. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012142329(A) 申请公布日期 2012.07.26
申请号 JP20100292096 申请日期 2010.12.28
申请人 TOSHIBA CORP 发明人 HANYU HIDENORI
分类号 H01L21/31;C23C16/455;C23C16/46;H01L21/205;H01L21/3065 主分类号 H01L21/31
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