| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique which is capable of providing an Si-based film with safety, at a relatively low temperature, and at a low cost, without using SiH<SB POS="POST">4</SB>having a high risk of explosion. <P>SOLUTION: A film forming material for forming the Si-based film contains t-C<SB POS="POST">4</SB>H<SB POS="POST">9</SB>SiX<SB POS="POST">3</SB>(X is an arbitrary group) and a reactive compound which reacts with the t-C<SB POS="POST">4</SB>H<SB POS="POST">9</SB>SiX<SB POS="POST">3</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
