CU-GA TARGET AND METHOD FOR MANUFACTURING SAME, AS WELL AS LIGHT-ABSORBING LAYER FORMED FROM CU-GA ALLOY FILM, AND CIGS SOLAR CELL USING LIGHT-ABSORBING LAYER

摘要

A Cu-Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at% and Cu as the balance, wherein the Cu-Ga alloy sintered-compact sputtering target is characterized in that the relative density thereof is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at% of the intended composition. A method for manufacturing a Cu-Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at% and Cu as the balance, wherein the method for manufacturing a Cu-Ga alloy sintered-compact sputtering target is characterized in that Cu and Ga starting materials are melted and cooled/pulverized to manufacture Cu-Ga alloy starting material powder, and the starting material powder is hot-pressed with the retention temperature of the hot press set at a temperature between the melting point of the mixed starting material powder and a temperature 15°C lower than the melting point, and with the pressure applied to the sintered mixed starting material powder set at 400 kgf/cm2 or greater. Provided are a sputtering target having very low compositional deviation and high density, and a method for manufacturing the same, as well as a light-absorbing layer formed from a Cu-Ga alloy film, and a CIGS solar cell using the light-absorbing layer.