发明名称 SELECTIVE POLYMER GROWTH ON A SEMICONDUCTOR SUBSTRATE
摘要 Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
申请公布号 US2012190194(A1) 申请公布日期 2012.07.26
申请号 US201213438336 申请日期 2012.04.03
申请人 BAR-SADEH EYAL;AMIR NURIEL;RIPP ALEXANDER;SHOR YAKOV;HORVITZ DROR 发明人 BAR-SADEH EYAL;AMIR NURIEL;RIPP ALEXANDER;SHOR YAKOV;HORVITZ DROR
分类号 H01L21/312;H01L21/3205 主分类号 H01L21/312
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