GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT

摘要

In this gallium nitride compound semiconductor light emitting element, which is provided with an active layer, the active layer contains a well layer (104) and a wall layer (103). The well layer (104) and wall layer (103) are each semiconductor layers with an m-plane for the growth surface. The well layer (104) has a lower surface and an upper surface and has an In composition distribution in which the In composition changes according to the distance from the lower surface in the direction of the layer thickness of this well layer (104). The In composition of the well layer (104) exhibits a local minimum at a position a fixed distance from the lower surface, and the part of the well layer (104) exhibiting the local minimum in the In composition extends parallel to the lower surface.