| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent oxidation of a magnetic layer contiguous to a spacer layer, and to achieve a large MR change rate. <P>SOLUTION: A magnetoresistance effect element 4 has first and second magnetic layers L1, L2 where the relative angle of magnetization direction to the external magnetic field changes, and a spacer layer 16 interposed between the first and second magnetic layers L1, L2. The first magnetic layer L1 is located on the side closer to a substrate, on which the magnetoresistance effect element 4 is formed, than the second magnetic layer L2. The spacer layer 16 has a main spacer layer 16b containing gallium oxide as a main component, and a first nonmagnetic layer 16a interposed between the main spacer layer 16b and the first magnetic layer L1 and containing copper and gallium. <P>COPYRIGHT: (C)2012,JPO&INPIT |
