发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.
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申请公布号 |
US2012186275(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213353883 |
申请日期 |
2012.01.19 |
申请人 |
KATO MASAHIKO;FUJIWARA NAOZUMI;MIYA KATSUHIKO |
发明人 |
KATO MASAHIKO;FUJIWARA NAOZUMI;MIYA KATSUHIKO |
分类号 |
F25D31/00;F25D17/02;F25D17/04 |
主分类号 |
F25D31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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