| 摘要 |
Photovoltaic and Light emitted diode devices comprise of epitaxial wafer of plurality of layers has been proposed. Quantum Dots are deposited onto the micro- nanostructure layer from the light incident direction to increasing light transmission to the active layer. Quantum dots deposited between the light source and the active layer, on the micro- nanostructure layer, to improve light excitation, since it can absorb wavelengths, which are not absorbed by the active layer, and the size and composition of quantum dots can determine its bandgap. A micro- nanostructured layer at the bottom of the PV wafer, which is produced by Molecular Beam Epitaxy (MBE), increases the internal light reflections in the active layer, which increases the efficiency of light absorption and that leads to a photocurrent enhancement. |
