| 摘要 |
A semiconductor memory device includes a lower wiring disposed on a first region of a substrate and a gate electrode disposed on a second region of the substrate. The lower wiring includes substantially the same conductive material as the gate electrode. A wiring-insulating layer is interposed between the lower wiring and the substrate, and a gate insulating layer is interposed between the gate electrode and the substrate. A diode is disposed on the lower wiring, and a variable resistance element is electrically coupled to the diode. |
