STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS

摘要

A method for forming a stressed channel field effect transistor (FET) with source/drain buffers (501) includes etching cavities (301) in a substrate (201) on either side of a gate stack located (202/203) on the substrate; depositing source/drain buffer material (401) in the cavities; etching the source/drain buffer material to form vertical source/drain buffers adjacent to a channel region (502) of the FET; and depositing source/drain stressor material (601) in the cavities adjacent to and over the vertical source/drain buffers.