发明名称 Wire and method for fabricating interconnection line and thin film transistor substrate and method for fabricating the same
摘要 Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.
申请公布号 KR101168728(B1) 申请公布日期 2012.07.26
申请号 KR20050064483 申请日期 2005.07.15
申请人 发明人
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
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