| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching apparatus with which it becomes possible to form a pattern having a high aspect ratio and a uniform inner diameter. <P>SOLUTION: With the plasma etching method according to the present invention, a substrate W, on whose surface a mask pattern is formed, is placed in a vacuum chamber 21, a plasma of a gas introduced into the vacuum chamber 21 is generated, the substrate W is etched using the plasma while applying a high-frequency electric field to the substrate W, and a frequency of the high-frequency electric field is changed in accordance with advancement of the etching of the substrate W. As a result, it becomes possible to change directivity of the etching (between isotropic etching and anisotropic etching). Through switching between a frequency, at which the isotropic etching is performed, and a frequency at which the anisotropic etching is performed, it becomes possible to form a pattern having a uniform inner diameter by suppressing enlargement and reduction of the pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
