发明名称 |
N-type carrier enhancement in semiconductors |
摘要 |
A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
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申请公布号 |
US2012190177(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213436850 |
申请日期 |
2012.03.31 |
申请人 |
KIM JEE HWAN;BEDELL STEPHEN W.;MAURER SIEGFRIED;SADANA DEVENDRA K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM JEE HWAN;BEDELL STEPHEN W.;MAURER SIEGFRIED;SADANA DEVENDRA K. |
分类号 |
H01L21/265;H01L21/20 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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