HIGH-EFFICIENCY DIODE LASER

摘要

The present invention relates to a high-efficiency laser diode. The object of the present invention is to specify a laser diode with high efficiency, low optical losses and a low non-reactive resistance. Furthermore, it should be possible to produce the laser diode according to the invention inexpensively. The laser diode according to the invention has a first n-conducting sheath layer (14), a first n-conducting waveguide layer (12), which is arranged on the first sheath layer (14), an active layer (10), which is suitable for generating radiation and which is arranged on the first waveguide layer (12), a second p-conducting waveguide layer (16), which is arranged on the active layer (10), and a second p-conducting sheath layer (18), which is arranged on the second waveguide layer (16), wherein, according to the invention, the sum of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10) and the layer thickness of the second waveguide layer (16) is greater than 1 µm, and the layer thickness of the second waveguide layer (16) is less than 150 nm, wherein the active layer (10), the first sheath layer (14), the second sheath layer (18), the first waveguide layer (12) and the second waveguide layer (16) are formed in such a way that the maximum mode intensity of the fundamental mode (24) is in a region outside the active layer (10), and wherein the difference between the refractive index of the first waveguide layer (12) and the refractive index of the first sheath layer (14) is between 0.04 and 0.01.