METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing a light-emitting diode, in which the tilt angle of a convex-concave portion formed in a semiconductor layer are adjusted through the variation of a dry-etching condition using the difference between etching speeds (etching rates) of a nanostructure and a semiconductor layer during dry etching, to thereby improve light extraction efficiency. The present invention also relates to a light-emitting diode manufactured by the method. The present invention is a method for manufacturing a light-emitting diode in which an active layer and a second semiconductor layer are sequentially formed on a first semiconductor layer, wherein the method comprises: a step of coating a nanostructure onto the second semiconductor layer; and a step of dry-etching the nanostructure together with the second semiconductor layer using the nanostructure as a mask, to thus form a convex-concave portion in the second semiconductor layer. The nanostructure uses a material which enables easier dry-etching than the material of the second semiconductor layer, and a dry-etching condition is set in consideration of the difference in the etching rate between the second semiconductor layer and the nanostructure, so as to adjust the tilt angle of the side surface of the convex-concave portion formed in the second semiconductor layer.