| 摘要 |
According to one embodiment, in a method for manufacturing a semiconductor light emitting device, a transparent conductive film is formed on a semiconductor laminated body of a multilayer structure containing a light emitting unit. The transparent conductive film is a film transmissive to a light of a luminescence wavelength from the light emitting unit. A mask is formed on the portion of the transparent conductive film. The transparent conductive film is removed by wet etching through the mask so as to expose the semiconductor laminated body. The semiconductor laminated body is removed by anisotropically etching through the mask so as to remove the light emitting unit. The mask is removed. A first electrode is formed on the portion of the semiconductor laminated body exposed after removing the light emitting unit. A second electrode is formed on the portion of the transparent conductive film. |
