MANUFACTURING METHOD OF NITRIDE-BASE TRANSISTOR HAVING CAP LAYER AND BURIED GATE

摘要

PROBLEM TO BE SOLVED: To solve a problem that a buried gate is damaged by etching in forming a buried part thereby causing deterioration of a gate region.

SOLUTION: A gate leakage can be reduced by performing annealing of a gate buried part before forming a gate contact such as a Schottky contact and/or a high quality gate contact can be provided in a semiconductor device such as a transistor. Damages to a semiconductor in the gate buried part of the transistor are further reduced by using an encapsulation layer during annealing. Annealing of an ohmic contact of the device, for example, can be provided as the annealing.

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