| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a manufacturing method of the same. <P>SOLUTION: A nonvolatile memory device comprises a memory string including a plurality of memory cells connected in series, and a first and a second selection transistors respectively connected with both end parts of the memory string. The memory string includes a first semiconductor layer 145 and a second conductive layer 125 contacting the first semiconductor layer 145 via a memory gate insulation film. The first and the second selection transistors includes a second and a third semiconductor layers 165A, 165B connected to one end and another end of the first semiconductor layer 145, respectively. The second conductive layer 125 includes a fourth semiconductor layer 165C contacting the first semiconductor layer 145 in a region on which the second conductive layer 125 is not arranged. <P>COPYRIGHT: (C)2012,JPO&INPIT |
