| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a void from occurring in a silicon oxide film formed in a spin on dielectric (SOD) method. <P>SOLUTION: A manufacturing method of a semiconductor device including a substrate, a groove-shaped region G formed on a surface of the substrate, and a silicon oxide film 8 buried in the groove-shaped region G comprises: a liner film formation step of forming a liner film 6 covering the surface of the substrate including the groove-shaped region G; a water-washing step of washing a surface of the liner film 6 in water; a moisture removal step of removing residual water after water washing; a coating step of coating the surface of the substrate with a polysilazane solution by spin coating; and a reforming step of reforming the polysilazane solution into the silicon oxide film 8 by annealing. <P>COPYRIGHT: (C)2012,JPO&INPIT |
