SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method includes: forming a first insulating film over the surface of a semiconductor substrate having at least two adjacent protrusions in such a manner that the film thickness between the two protrusions is not less than 1.2 times the height of at least one of the two protrusions; and forming a second insulating film over the first insulating film, the second insulating film being harder than the first insulating film.