发明名称 |
METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR |
摘要 |
A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
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申请公布号 |
US2012190141(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213434860 |
申请日期 |
2012.03.30 |
申请人 |
HUANG SHIH-CHENG;TU PO-MIN;YEH YING-CHAO;LIN WEN-YU;WU PENG-YI;CHAN SHIH-HSIUNG;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
HUANG SHIH-CHENG;TU PO-MIN;YEH YING-CHAO;LIN WEN-YU;WU PENG-YI;CHAN SHIH-HSIUNG |
分类号 |
H01L33/50 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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