发明名称 PERFORMANCE AND POWER IMPROVEMENT ON DMA WRITES TO LEVEL TWO COMBINED CACHE/SRAM THAT IS CAUSED IN LEVEL ONE DATA CACHE AND LINE IS VALID AND DIRTY
摘要 This invention optimizes DMA writes to directly addressable level two memory that is cached in level one and the line is valid and dirty. When the level two controller detects that a line is valid and dirty in level one, the level two memory need not update its copy of the data. Level one memory will replace the level two copy with a victim writeback at a future time. Thus the level two memory need not store write a copy. This limits the number of DMA writes to level two directly addressable memory and thus improves performance and minimizes dynamic power. This also frees the level two memory for other master/requestors.
申请公布号 US2012191914(A1) 申请公布日期 2012.07.26
申请号 US201113245183 申请日期 2011.09.26
申请人 TRAN JONATHAN (SON) HUNG;DAMODARAN RAGURAM;CHACHAD ABHIJEET ASHOK;ZBICIAK JOSEPH RAYMOND MICHAEL;TEXAS INSTRUMENTS INCORPORATED 发明人 TRAN JONATHAN (SON) HUNG;DAMODARAN RAGURAM;CHACHAD ABHIJEET ASHOK;ZBICIAK JOSEPH RAYMOND MICHAEL
分类号 G06F12/08 主分类号 G06F12/08
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