METHODS AND SYSTEMS FOR MEMS CMOS PROGRAMMABLE MEMORIES AND RELATED DEVICES

摘要

Systems and methods for CMOS-based MEMS programmable memories are described. In one aspect, the systems and methods provide for a programmable memory having multiple memory cells. Each memory cell includes an electrode disposed within the memory cell, and a conductor material having two ends disposed proximate to the electrode. The programmable memory provides means for applying a voltage between the electrode and the conductor material, e.g., a voltage source. The applied voltage generates an electrostatic force sufficient to permanently alter the conductor material, thereby programming the memory cell.