| 摘要 |
<p>The present invention addresses the problem of providing a highly integrated static-type memory cell that uses SGTs, and providing a static-type memory cell in which operational stability is secured. The present invention addresses the above-mentioned problems by providing a memory cell characterized by having: driver transistors, each of which is formed from a first gate-insulation film that surrounds the circumference of an island-formed semiconductor, a gate electrode having a first face in contact with the first gate insulation film, and a first conductive type high concentration semiconductor arranged at the upper and lower parts of the island-like semiconductor; load transistors, each of which is formed from a second gate insulation film having a first face in contact with a second face of the gate electrode, an arc-formed semiconductor formed so as to come in contact with a portion of the second face of the second gate insulation film, and a second conductive type high concentration semiconductor arranged at the upper and lower parts of the arc-like semiconductor; and gate wirings, each extending from a respective gate electrode and comprising the same material as the gate electrode, the upper face of the gate wiring being lower than the upper end of the second conductive type high concentration semiconductor.</p> |
