METHOD FOR FORMING LITHOGRAPHIC MASKS AND RELIEF-PHASE PERIODICAL STRUCTURES ON LAYERS OF CHALCOGENIDE PHOTORESISTS

摘要

The invention relates to photolithography and concerns manufacturing of lithographic masks on the surface of semiconductor and dielectric wafers in microelectronic or optical engineering as well as forming by means of interference lithography of relief-phase structures to use in integrated optics, touch-sensitive and laser engineering, holography etc. A method of forming lithographic mask and relief-phase periodical structures on the surface of photoresists includes application onto substrate of photoresist layer of inorganic chalcogenide compound, exposure of photoresist to emission of spectral composition corresponding to interband absorption of chalcogenides by means of projecting to photoresist of corresponding mask image or interference field formed by two coherent light bundles, and selective etching of photoresist in an anhydrous etchant based on amines. The method is characterized in that prior to exposure films of chalcogenide photoresist is burned off, and exposure and selective etching of the photoresist is performed simultaneously.