Method of manufacturing SEMICONDUCTOR TRANSISTORS WITH CONTACT HOLES CLOSE TO GATES,申请号EP20060829916-传众专利搜索

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发明名称	Method of manufacturing SEMICONDUCTOR TRANSISTORS WITH CONTACT HOLES CLOSE TO GATES
摘要
申请公布号	EP1952433(B1)	申请公布日期	2012.07.25
申请号	EP20060829916	申请日期	2006.10.19
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	HORAK, DAVID, VACLAV;HAKEY, MARK, CHARLES;HOLMES, STEVEN, JOHN;FURUKAWA, TOSHIHARU;KOBURGER, CHARLES, WILLIAM, III;TONTI, WILLIAM, ROBERT
分类号	H01L21/28;H01L21/768	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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