| 摘要 |
A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed. |
