发明名称 |
LIQUID CRYSTAL DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE |
摘要 |
A transistor (N1) has (i) a gate terminal which is connected to a word line (Xi(1)) and (ii) a first conduction terminal which is connected to a bit line (Yj). A transistor (N2) has (i) a gate terminal which is connected to the word line (Xi(2)) and (ii) a first conduction terminal which is connected to a node (PIX). A transistor (N3) has (i) a gate terminal which is connected to a node (MRY) and (ii) a first conduction terminal which is connected to the word line (Xi(2)). A transistor (N4) has (i) a gate terminal which is connected to the word line (Xi(3)), (ii) a first conduction terminal which is connected to a second conduction terminal of the transistor (N3), and (iii) a second conduction terminal which is connected to the node (PIX). A capacitor (Ca1) is formed between the node (PIX) and a reference electric potential wire (RL1), a capacitor (Cb1) is formed between the node (MRY) and the reference electric potential wire (RL1), and a capacitor (Cap1) is formed between the first conduction terminal of the transistor (N3) and the node (MRY). In a memory device which carries out a refresh operation in a data retention period following writing of a data signal electric potential, power consumption is reduced and the refresh operation is properly carried out. |
申请公布号 |
EP2479760(A1) |
申请公布日期 |
2012.07.25 |
申请号 |
EP20100816934 |
申请日期 |
2010.05.18 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NISHI, SHUJI;MURAKAMI, YUHICHIROH;FURUTA, SHIGE;SASAKI, YASUSHI;GYOUTEN, SEIJIROU |
分类号 |
G11C11/405;G02F1/133;G02F1/1368;G09G3/20;G09G3/36;G11C11/401;H01L21/8244;H01L27/11 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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