发明名称 |
LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
<p>The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.</p> |
申请公布号 |
EP1561247(B1) |
申请公布日期 |
2012.07.25 |
申请号 |
EP20030772905 |
申请日期 |
2003.11.17 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
CHOO, SUNG-HO;JANG, JA-SOON |
分类号 |
H01L33/32;H01L33/40;H01L33/42 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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