发明名称 |
SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS |
摘要 |
<p>In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.</p> |
申请公布号 |
EP2477944(A1) |
申请公布日期 |
2012.07.25 |
申请号 |
EP20100817718 |
申请日期 |
2010.09.14 |
申请人 |
II-VI INCORPORATED |
发明人 |
GUPTA, AVINASH, K.;ZWIEBACK, ILYA;SEMENAS, EDWARD;RENGARAJAN, VARATHARAJAN;GETKIN, MARCUS, L. |
分类号 |
C01B31/36;B01D9/00;C30B23/00;C30B29/36 |
主分类号 |
C01B31/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|