METHOD FOR MANUFACTURING SOI WAFER

摘要

The present invention is a method for manufacturing an SOI wafer comprising the steps of:
implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer, the method further comprising the step of immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. As a result, there is provided a method for manufacturing an SOI wafer that enables the terrace width, which is generated in case of the delamination by the ion implantation delamination method, to be controlled and the SOI island of the terrace portion, which causes a lower yield, to be prevented from being generated.