| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally-off vertically structured gallium nitride based MIS transistor. SOLUTION: A gallium nitride based substrate 13 includes a first region 13c having a larger dislocation density than a first dislocation density, and a second region 13d having a smaller dislocation density than the first dislocation density. A gallium nitride based semiconductor region 15 includes a first region 15c having a larger dislocation density than a second dislocation density, and a second region 15d having a smaller dislocation density that the second dislocation density. A source region 15a is provided in the second region 15d of the gallium nitride based semiconductor region 15. A well region 15b is provided in the second region 15d between the source region 15a and the gallium nitride based substrate 13. The conductivity of the first region 15c of the gallium nitride based semiconductor region 15 is larger than that of the second region 15d of the gallium nitride based semiconductor region 15. COPYRIGHT: (C)2007,JPO&INPIT |
