| 摘要 |
<p>Such that at least 5 mol% of donor ions are doped at an A site, a ferroelectric film (40) containing a perovskite type oxide of Formula (P) is formed on a substrate (B) facing a target (T) by sputtering under conditions of a height of a shield (250), which surrounds an outer periphery of the target (T) on the substrate side in a non-contact state and comprises shielding layers (250a, 250a, ...) superposed at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions of a substrate temperature of at least 400°C:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (Ph 1-x+´ M x ) (Zr y Ti 1-y )O-€ƒ€ƒ€ƒ€ƒ€ƒ(P)
wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0. 05 ‰¤ x ‰¤ 0. 4, and 0 < y ‰¤ 0.7, the standard composition being such that ´=0, and z=3.</p> |
