Method for manufacturing a field-effect device with low junction capacitance

摘要

The method involves partially eliminating an electrically insulating layer between a support substrate (4) and a semiconductor film (6) of a substrate to form source and drain electrodes (2, 3) suspended and maintained by a mechanical support area (5a) that is arranged along a gate electrode (1) between the film and the support substrate. An electrically insulating material is deposited between the source and drain electrodes and the support substrate to form areas having the dielectric constant lower than the support area. Two regions of sacrificial material are formed in the layer. The substrate is made of a porous or permeable material to form an access path to the insulating layer.