发明名称 Semiconductor device and method of manufacturing the same
摘要 An object is to prevent a failure, such as a wiring separation or a crack, in an insulating film under a copper wire, in a semiconductor device formed by wire-bonding the copper wire on a portion above the copper wiring. A semiconductor device according to the present invention includes a copper wiring formed above a semiconductor substrate, a plated layer formed so as to cover a top surface and side surfaces of the copper wiring, and a copper wire which is wire-bonded on the plated layer above the copper wiring.
申请公布号 US8227341(B2) 申请公布日期 2012.07.24
申请号 US20090646173 申请日期 2009.12.23
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC;SANYO SEMICONDUCTOR CO., LTD. 发明人 ONAI SATOSHI;AKAISHI MINORU;ISHIZEKI HIROSHI;SANO YOSHIAKI
分类号 H01L21/44;H01L29/40 主分类号 H01L21/44
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