| 发明名称 |
Semiconductor device and manufacturing method of the same |
| 摘要 |
A method of making a semiconductor device having an ESD protection element which can achieve compatibility between high drain-to-backgate withstand voltage and ESD protection of DMOSFET gates. |
| 申请公布号 |
US8227314(B2) |
申请公布日期 |
2012.07.24 |
| 申请号 |
US201113330082 |
申请日期 |
2011.12.19 |
| 申请人 |
MORI HIDEKI;SONY CORPORATION |
发明人 |
MORI HIDEKI |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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