ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要
<p>PURPOSE: An organic thin film transistor and method of manufacturing the same are provided to reduce the manufacturing costs by simplifying a process and forming a minute pattern with a surface treatment without an additional patterning which forms an electrode and semiconductor with an inkjet printing method. CONSTITUTION: A gate electrode(124) including an organic insulating substrate(140) having a source(173) and drain(175) electrodes is formed on a substrate(110). An organic semiconductor(154) is formed on the source and drain electrodes. A surface processing layer(125a) is formed between the organic semiconductor and substrate.</p>
申请公布号
KR20120082698(A)
申请公布日期
2012.07.24
申请号
KR20110004136
申请日期
2011.01.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, SEUNG HO;CHUNG, JAE WOO;HONG, YOUNG KI;KIM, JOONG HYUK