发明名称 ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: An organic thin film transistor and method of manufacturing the same are provided to reduce the manufacturing costs by simplifying a process and forming a minute pattern with a surface treatment without an additional patterning which forms an electrode and semiconductor with an inkjet printing method. CONSTITUTION: A gate electrode(124) including an organic insulating substrate(140) having a source(173) and drain(175) electrodes is formed on a substrate(110). An organic semiconductor(154) is formed on the source and drain electrodes. A surface processing layer(125a) is formed between the organic semiconductor and substrate.</p>
申请公布号 KR20120082698(A) 申请公布日期 2012.07.24
申请号 KR20110004136 申请日期 2011.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEUNG HO;CHUNG, JAE WOO;HONG, YOUNG KI;KIM, JOONG HYUK
分类号 H01L51/40;H01L29/786 主分类号 H01L51/40
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