APPARATUS AND METHOD FOR TREATING SUBSTRATE USING PLASMA
摘要
<p>PURPOSE: An apparatus for processing a substrate using plasma and a method thereof are provided to increase plasma generating density by supplying power to a main electrode and auxiliary electrode. CONSTITUTION: A main electrode(110) includes an upper electrode(111) formed on an inner upper portion of a chamber(10) and a bottom electrode(113) formed on an inner lower portion of the chamber. The upper electrode and the bottom electrode generate the electromotive force for plasma generation. The upper electrode and the bottom electrode receive power from a power supply unit(150). A main power source includes a first main power source(151a) connected to the upper electrode and a second main power source(151b) connected to the bottom electrode. A fluid supply unit(170) supplies a fluid for generating plasma within the chamber. An auxiliary electrode(130) includes a first electrode(131) and a second electrode(133).</p>
申请公布号
KR20120082640(A)
申请公布日期
2012.07.24
申请号
KR20110004040
申请日期
2011.01.14
申请人
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人
HAN, JEON GEON;CHOI, IN SIK;CHOI, YOON SEOK;JIN, SU BONG;KIM, YOUN JOON;BAE, EUN HYUN