发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A technique for increasing productivity by simplified steps in a manufacturing process of TFTs, electronic circuits using TFTs, and semiconductor devices formed of TFTs is provided. A method for manufacturing a semiconductor device includes forming a light absorbing layer, forming a light-transmitting layer on the light absorbing layer emitting a linear laser beam with a homogenized energy onto a mask and thereby splitting the linear laser beam into a plurality of laser beams and emitting the plurality of laser beams onto the light-transmitting layer on the light absorbing layer, and thereby forming a plurality of openings in the light-transmitting layer and the light absorbing layer. |
申请公布号 |
US8227353(B2) |
申请公布日期 |
2012.07.24 |
申请号 |
US20070893226 |
申请日期 |
2007.08.14 |
申请人 |
OMATA TAKATSUGU;TANAKA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OMATA TAKATSUGU;TANAKA KOICHIRO |
分类号 |
H01L21/326;G03F7/00;H01L21/00;H01L21/479 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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