发明名称 Method for manufacturing semiconductor device
摘要 A technique for increasing productivity by simplified steps in a manufacturing process of TFTs, electronic circuits using TFTs, and semiconductor devices formed of TFTs is provided. A method for manufacturing a semiconductor device includes forming a light absorbing layer, forming a light-transmitting layer on the light absorbing layer emitting a linear laser beam with a homogenized energy onto a mask and thereby splitting the linear laser beam into a plurality of laser beams and emitting the plurality of laser beams onto the light-transmitting layer on the light absorbing layer, and thereby forming a plurality of openings in the light-transmitting layer and the light absorbing layer.
申请公布号 US8227353(B2) 申请公布日期 2012.07.24
申请号 US20070893226 申请日期 2007.08.14
申请人 OMATA TAKATSUGU;TANAKA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OMATA TAKATSUGU;TANAKA KOICHIRO
分类号 H01L21/326;G03F7/00;H01L21/00;H01L21/479 主分类号 H01L21/326
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