发明名称 |
Thin film transistor, display device and liquid crystal display device and method for manufacturing the same |
摘要 |
As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole. |
申请公布号 |
US8228453(B2) |
申请公布日期 |
2012.07.24 |
申请号 |
US20110984627 |
申请日期 |
2011.01.05 |
申请人 |
YAMAZAKI SHUNPEI;MAEKAWA SHINJI;KANNO YOHEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MAEKAWA SHINJI;KANNO YOHEI |
分类号 |
G02F1/1368;H01L21/28;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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