发明名称 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE
摘要 PURPOSE: An organic thin film transistor, method of manufacturing the same and electronic device are provided to prevent oxidation or corrosion of an electrode by putting a self-assembled monolayer on an interface of an organic semiconductor layer and a source and a drain electrodes. CONSTITUTION: A gate electrode(12) is formed on a substrate(11). A gate insulating substrate is formed on the substrate including the gate electrode. A source(16) and drain(17) electrodes including an organic semiconductor layer(15) are formed on the gate substrate. A self-assembled monolayer(14) is formed on an interface between the electrodes of the source and drain and organic semiconductor layer.
申请公布号 KR20120082699(A) 申请公布日期 2012.07.24
申请号 KR20110004137 申请日期 2011.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO, BYUNG WOOK;PARK, JEONG IL;JIN, YONG WAN;LEE, SANG YOON;KOO, BON WON;CHUNG, JONG WON
分类号 H01L51/10;C07D249/18;C07D277/62;H01L51/30 主分类号 H01L51/10
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