发明名称 |
ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE |
摘要 |
PURPOSE: An organic thin film transistor, method of manufacturing the same and electronic device are provided to prevent oxidation or corrosion of an electrode by putting a self-assembled monolayer on an interface of an organic semiconductor layer and a source and a drain electrodes. CONSTITUTION: A gate electrode(12) is formed on a substrate(11). A gate insulating substrate is formed on the substrate including the gate electrode. A source(16) and drain(17) electrodes including an organic semiconductor layer(15) are formed on the gate substrate. A self-assembled monolayer(14) is formed on an interface between the electrodes of the source and drain and organic semiconductor layer. |
申请公布号 |
KR20120082699(A) |
申请公布日期 |
2012.07.24 |
申请号 |
KR20110004137 |
申请日期 |
2011.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO, BYUNG WOOK;PARK, JEONG IL;JIN, YONG WAN;LEE, SANG YOON;KOO, BON WON;CHUNG, JONG WON |
分类号 |
H01L51/10;C07D249/18;C07D277/62;H01L51/30 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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