| 摘要 |
PURPOSE: A pattern forming method and a resist composition for the same are provided to increase dissolution contrast and the dissolution of non-exposed regions and to reduce the dissolution of exposed regions in case of forming a positive-negative inversion image. CONSTITUTION: A pattern forming method includes the following: a resist composition is applied on a substrate; a heating operation is implemented, and a resist film is exposed based on high energy beam; and a heating operation is implemented, and a non-exposed region is dissolved using an organic solvent-based developing solution to form a negative pattern in which the dissolution of exposed regions is prevented. The resist composition includes a polymer compound containing a repeating unit with a nitrogen element, which combines acid labile group, an acid generator, and an organic solvent. The nitrogen element is carbamate group. The polymer compound includes either or both of a repeating unit a1 or/and a repeating unit a2 represented by chemical formula 1. In chemical formula 1, R1 is a hydrogen element or a methyl group; R2 is a hydrogen element, an acid labile group, or C1 to C16 linear, or branched or cyclic alkyl group and is capable of forming a non-aromatic ring with X, and the ring is capable of including a carbonyl group; R3 is acid labile group; and X is a single bond, a phenylene group, a naphthalene group, -C(=O)-, or -C(=O)-O-R4-. |
