发明名称 |
Nonvolatile memory devices including variable resistive elements |
摘要 |
A nonvolatile memory device may include a memory cell array having a plurality of nonvolatile memory cells arranged in a matrix including a plurality of rows of the nonvolatile memory cells. Each of a plurality of word lines may be coupled with nonvolatile memory cells of a respective row of the matrix. A row decoder may be coupled to the plurality of word lines with the row decoder being configured to disable at least one of the word lines using a row bias having a level that is adjusted responsive to changes in temperature. Such a nonvolatile memory device may operate with reduced standby currents. |
申请公布号 |
US8228720(B2) |
申请公布日期 |
2012.07.24 |
申请号 |
US20090556787 |
申请日期 |
2009.09.10 |
申请人 |
CHOI BYUNG-GIL;KIM HYE-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-GIL;KIM HYE-JIN |
分类号 |
G11C7/04;G11C8/08;G11C8/10;G11C11/21 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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