发明名称 |
Top-emitting N-based light emitting device and method of manufacturing the same |
摘要 |
Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing. |
申请公布号 |
US8227283(B2) |
申请公布日期 |
2012.07.24 |
申请号 |
US20070812305 |
申请日期 |
2007.06.18 |
申请人 |
SEONG TAE-YEON;LEE TAK-HEE;LEEM DONG-SEOK;SAMSUNG LED CO., LTD. |
发明人 |
SEONG TAE-YEON;LEE TAK-HEE;LEEM DONG-SEOK |
分类号 |
H01L21/00;H01L33/06;H01L33/12;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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