发明名称 Masks and methods of forming the same
摘要 Methods of forming masks. According to the methods, a target pattern is set. Generation of a side lobe caused by the target pattern is verified. A preliminary target pattern and a preliminary side lobe pattern are set, in the target pattern and a region where the side lobe is generated, respectively. An interference pattern map using the preliminary target pattern and the preliminary side lobe pattern is created. At least one of regions having a phase identical or opposite to that of a position of the preliminary target pattern in the interference pattern map is set to an interference auxiliary pattern. A mask using the interference auxiliary pattern and the target pattern is formed.
申请公布号 US8227149(B2) 申请公布日期 2012.07.24
申请号 US20100656881 申请日期 2010.02.18
申请人 CHUN YONGJIN;CHOI SOOHAN;KIM SANGWOOK;CHOI SEONGWOON;LEE SUKJOO;LEE SUNGWOO;KIM YOUNGCHANG;SUH SUNGSOO;CHOI JIN-SUN;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUN YONGJIN;CHOI SOOHAN;KIM SANGWOOK;CHOI SEONGWOON;LEE SUKJOO;LEE SUNGWOO;KIM YOUNGCHANG;SUH SUNGSOO;CHOI JIN-SUN
分类号 G03F1/70 主分类号 G03F1/70
代理机构 代理人
主权项
地址